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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Preliminary Data Sheet
* High DC Current Gain -- hFE = 140 (Min) @ IC = 1.2 Adc = 125 (Min) @ IC = 3.0 Adc
Plastic Power Transistors
SO-8 for Surface Mount Applications
* Collector -Emitter Sustaining Voltage -- VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc
MMDJ3P03BJT
Motorola Preferred Device
DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 AMPERES
* Low Collector -Emitter Saturation Voltage -- VCE(sat) = 0.24 Vdc (Max) @ IC = 1.2 Adc = 0.60 Vdc (Max) @ IC = 5.0 Adc * Miniature SO-8 Surface Mount Package - Saves Board Space
E B E B Schematic
C
CASE 751-05, Style 16 (SO-8)
C
Emitter-1 Base-1 Emitter-2 Base-2
1 2 3 4
8 7 6 5
Collector-1 Collector-1 Collector-2 Collector-2
Top View Pinout
II I I IIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating Symbol VCB Value 45 30 Unit Vdc Vdc Vdc Adc Adc Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VCEO VEB IC IB 8.0 3.0 5.0 1.0 Collector Current -- Continuous Collector Current -- Peak Base Current -- Continuous Operating and Storage Junction Temperature Range TJ, Tstg - 55 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol RJC PD TL
Max
Unit
Thermal Resistance - Junction to Ambient(1) Total Power Dissipation @ TA = 25_C(1) Derate above 25_C Maximum Temperature for Soldering
62.5 2.0 16
_C/W
Watts mW/_C
260
_C
(1) Mounted on 2" sq. FR-4 board (1" sq. 2 oz. Cu 0.06" thick single sided) with one die operating, 10 seconds max.
This document contains information on a new product. Specifications and information are subject to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
(c) Motorola, Inc. 1997 Motorola Bipolar Power Transistor Device Data
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II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII I I I II I I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
MMDJ3P03BJT
(1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) fT = |hFE| S ftest DYNAMIC CHARACTERISTICS ON CHARACTERISTICS(1) OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
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Current-Gain -- Bandwidth Product(2) (IC = 500 mA, VCE = 10 V, Ftest = 1.0 MHz) Input Capacitance (VEB = 8.0 Vdc) Output Capacitance (VCB = 10 Vdc, IE = 0 Adc, f = 1.0 MHz) DC Current Gain (IC = 1.2 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) Base-Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc) Base-Emitter Saturation Voltage (IC = 5.0 Adc, IB = 1.0 Adc) Collector-Emitter Saturation Voltage (IC = 0.8 Adc, IB = 20 mAdc) (IC = 1.2 Adc, IB = 20 mAdc) (IC = 5.0 Adc, IB = 1.0 Adc) Emitter Cutoff Current (VBE = 5.0 Vdc) Collector Cutoff Current (VCE = 25 Vdc, RBE = 200 W) Collector-Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0 Adc) Characteristic
VCEO(sus)
VCE(sat)
VBE(sat)
VBE(on)
Symbol
Motorola Bipolar Power Transistor Device Data
IEBO ICER Cob hFE Cib fT Min 140 125 30 -- -- -- -- -- -- -- -- -- -- 0.14 -- -- Typ 105 135 100 -- -- -- -- -- -- 180 1.10 1.40 0.20 0.24 0.60 Max 10 20 -- -- -- -- -- -- Adc Adc MHz Unit Vdc Vdc Vdc Vdc pF pF --
MMDJ3P03BJT
1000 150C 25C -55C 1.0 VBE(sat) V, VOLTAGE (V)
h FE , DC CURRENT GAIN
100
0.1 VCE(sat)
10 VCE = 2 V 1.0 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (A)
IC/IB = 125 0.01 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain
Figure 2. "ON" Voltages
VCE(sat) , COLLECTOR-EMITTER VOLTAGE (V)
1.00 IC = 0.8 A 0.75 CAPACITANCE (pF) IC = 1.2 A
1000
Cob 100
0.50
0.25
IC = 0.5 A 10 1.0 10 IB, BASE CURRENT (mA) 100 0.1 1.0 10 100 VR, REVERSE BIAS (V)
0
Figure 3. Collector Saturation Region
Figure 4. Capacitance
10 R thja(t) , EFFECTIVE TRANSIENT THERMAL RESISTANCE
1.0
D = 0.5 0.2 NORMALIZED TO qja AT 10 s 0.0106 W 0.0431 W 0.1643 W 0.3507 W 0.4302 W 177.14 F 0.0253 F SINGLE PULSE 0.1406 F 0.5064 F 2.9468 F AMBIENT 0.001 0.01 0.1 1.0 10 100 1000
0.1
0.1 0.05 0.02 0.01
CHIP JUNCTION
0.01
0.001 0.00001 0.0001 IC, COLLECTOR CURRENT (AMPS)
Figure 5. Thermal Response
Motorola Bipolar Power Transistor Device Data
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MMDJ3P03BJT
PACKAGE DIMENSIONS
-A- B
M 8 5 X 45 _
J
1 4
4X
-B-
M_ G F
NOTES: 1. DIMENSIONS A AND B ARE DATUMS AND T IS A DATUM SURFACE. 2. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 3. DIMENSIONS ARE IN MILLIMETER. 4. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 6. DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. DIM A B C D F G J K M P R MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.18 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50
P
0.25 (0.010)
M
C
R
-T-
8X
SEATING PLANE
D 0.25 (0.010)
M
TB
S
A
S
STYLE 16: PIN 1. 2. 3. 4. 5. 6. 7. 8.
EMITTER, DIE #1 BASE, DIE #1 EMITTER, DIE #2 BASE, DIE #2 COLLECTOR, DIE #2 COLLECTOR, DIE #2 COLLECTOR, DIE #1 COLLECTOR, DIE #1
K
CASE 751-05 ISSUE P
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Motorola Bipolar Power Transistor Device Data MMDJ3P03BJT/D

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